首页> 外国专利> SENSING AMPLIFIER AND NONVOLATILE MULTIVALUE MEMORY DEVICE USING THE SENSING AMPLIFIER

SENSING AMPLIFIER AND NONVOLATILE MULTIVALUE MEMORY DEVICE USING THE SENSING AMPLIFIER

机译:传感放大器和使用该传感放大器的非易失性多值存储器

摘要

PROBLEM TO BE SOLVED: To provide a sensing amplifier with a wide output voltage range. SOLUTION: A sensing amplifier consists of a memory cell 1 in which multivalue information can be stored, a current mirror circuit 2 by which the drain current of the memory cell 1 corresponding to a drain voltage generated in accordance with the multivalue information is reversed, a transistor 3 which has the same construction as the memory cell 1 and to which the output current of the current mirror circuit 2 is supplied and a voltage generating circuit 4 which applies a voltage to the floating gate of the transistor 3. By switching the voltage of the voltage generating circuit 4 so as to match the charge in the floating gate of the transistor 3 with the charge in the floating gate of the memory cell 1, the impedance of the transistor 3 can be varied, so that an output voltage range can be widened.
机译:解决的问题:提供具有宽输出电压范围的感测放大器。解决方案:感测放大器包括一个可存储多值信息的存储单元1,一个电流镜电路2,通过该电流镜电路2可将与根据多值信息生成的漏极电压相对应的存储单元1的漏极电流反向,晶体管3具有与存储单元1相同的结构,并向其提供电流镜电路2的输出电流,以及电压产生电路4,该电压产生电路4将电压施加到晶体管3的浮栅。通过将电压产生电路4与晶体管3的浮置栅极中的电荷与存储单元1的浮置栅极中的电荷进行匹配,可以改变晶体管3的阻抗,从而可以使输出电压范围为加宽。

著录项

  • 公开/公告号JPH11134890A

    专利类型

  • 公开/公告日1999-05-21

    原文格式PDF

  • 申请/专利权人 SANYO ELECTRIC CO LTD;

    申请/专利号JP19970300566

  • 发明设计人 UCHINO TAKASHI;HAGIWARA HARUO;

    申请日1997-10-31

  • 分类号G11C16/06;G11C11/416;G11C16/02;

  • 国家 JP

  • 入库时间 2022-08-22 02:36:20

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