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MOLYBDENUM MATERIAL FOR DIODE ELECTRODE AND ITS MANUFACTURE
MOLYBDENUM MATERIAL FOR DIODE ELECTRODE AND ITS MANUFACTURE
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机译:二极管电极用钼材料及其制造
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摘要
PROBLEM TO BE SOLVED: To provide a molybdenum material for diode electrodes and a manufac turing method whereby a long-life diode having a uniform quantity can be obtd. ;SOLUTION: A molybdenum(Mo) material for diode electrodes is incorporated in a diode 10 as Mo electrodes 2, 3 for sandwiching a diode chip 1 and provides a backward current of 17 nA or less with an applied potential of 200-1500 V. This Mo material for diode electrodes is made by heat-treating an Mo rod at 1000-2000°C to control so that crystal grain no. per unit area is 6500 grains/mm2 or less.;COPYRIGHT: (C)1999,JPO
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机译:要解决的问题:提供一种用于二极管电极的钼材料及其制造方法,从而可以制得具有均匀量的长寿命二极管。 ;解决方案:用于二极管电极的钼(Mo)材料作为钼电极2、3并入二极管10中,用于夹在二极管芯片1上,并提供17 nA或更低的反向电流,施加的电势为200-1500V。该二极管电极用Mo材料是通过在1000〜2000℃下对Mo棒进行热处理以控制晶粒No.1而制成的。每单位面积6500粒/ mm 2 Sup>或以下。版权所有:(C)1999,日本特许厅
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