CHEMICAL VAPOR GROWTH OF SILICON NITRIDE FROM BIS (TERTIARY-BUTYLAMINO) SILANE

摘要

PROBLEM TO BE SOLVED: To obtain a silicon nitride film in which Si-C bonding is evaded and small in contaminants of carbon, hydrogen and chlorine by using ammonia and a specified silane and allowing silicon nitride to low pressure vapor growth on a base material. ;SOLUTION: The silane to be used is a compd. shown by (t-C₄H₉NH)₂SiH₂. The temp. of a base material is regulated to the range of 500 to 800 C, the pressure is regulated to the range of 20 mTorr to 2 Torr (2.666 to 266.6 Pa), and the value of the molar number of ammonia/the molar number of silane is made higher than 2. Preferably, the base material is composed of silicon, the base material is an electronic device, or the base material is a flat panel display. Preferably, this is a low temp. chemical vapor growth method of silicon nitride in a reactive region, and in which the base material is heated at 500 to 800°C, the base material is held to a reduced pressure of 20 mTorr to 2 Torr (2.666 to 266.6 Pa), ammonia and silane of (t-C₄₂H₉NH)₂SiH₂; are introduced therein, and treatment is executed.;COPYRIGHT: (C)1999,JPO