PRODUCTION OF THIN FILM EPITAXIAL WAFER AND THIN FILM EPITAXIAL WAFER PRODUCED THEREWITH

摘要

PROBLEM TO BE SOLVED: To realize reduced pressure and low temp. epitaxial growth that enables fewer COP(crystal-originated particles) and good electric properties of a thin film epitaxial wafer and correspondence to low temp. production of a device and also to cope with the problems with respect to improvement in yield of the wafer and production of a larger-diameter thin film epitaxial wafer. ;SOLUTION: This production comprises: subjecting the surface of a single crystal silicon substrate to hydrogen termination treatment (SCl cleaning and dilute HF treatment); thereafter, further subjecting the treated silicon substrate to H₂ annealing at 800 to 950°C; and then, performing reduced pressure epitaxial growth on the resulting single crystal silicon substrate at or below the H₂ annealing temp. to form an epitaxial layer having a ≥0.5 μm thickness on the silicon substrate. By using the production, the objective reduced pressure and low temp. epitaxial growth which enables a decrease in residual COP in the surface of the epitaxial layer and good electric properties of a thin film epitaxial wafer thus produced, can be realized. Thus, the thin film epitaxial wafer that is produced at a low temp. and therefore, capable of corresponding to low temp. production of a device on the user side, can be produced and also, an improvement in yield of the wafer can be attained and further, this production can cope with the problems with respect to the production of a larger-diameter thin film epitaxial wafer.;COPYRIGHT: (C)1999,JPO