RELIEF PATTERN, RELIEF PATTERN FOR ADDITIVE, RELIEF PATTERN FOR FORMING BARRIER, PRODUCTION OF RELIEF PATTERN AND PHOTOSENSITIVE ELEMENT USED IN SAME

摘要

PROBLEM TO BE SOLVED: To obtain a relief pattern excellent in chemical and solvent resistances and suitable for an additive process by specifying the ratio of the base to the upside of a cross section. ;SOLUTION: The ratio (b/a) of the base (b) to the upper side (a) of a cross section of the relief pattern 2 is 0.5-1.0 and the pref. height (thickness) of the cross section is 120-300 μm, particularly 150-300 μm. The relief pattern 2 is produced, e.g. by imagewise exposing a photosensitive resin layer having 0.5-40% light transmittance at the wavelength at which the max. absorption is exhibited formed on a substrate 1 and removing the unexposed part by development. The wavelength at which the max. absorption is exhibited is preferably in the range of 300-420 nm. It is preferable that the photosensitive resin layer comprises two or more layers different from each other in light transmittance, the layer farthest from the substrate 1 has the lowest light transmittance and the transmittance increases gradually toward the substrate 1.;COPYRIGHT: (C)1999,JPO