首页> 外国专利> CONTACT FILM BARRIER FILM CONTINUOUSLY FORMING EQUIPMENT AND DIFFERENT KIND THIN FILM CONTINUOUSLY FORMING EQUIPMENT

CONTACT FILM BARRIER FILM CONTINUOUSLY FORMING EQUIPMENT AND DIFFERENT KIND THIN FILM CONTINUOUSLY FORMING EQUIPMENT

机译:连续薄膜阻隔薄膜连续成型设备和不同种类的薄膜连续成型设备

摘要

PROBLEM TO BE SOLVED: To enable continuously forming, in a vacuum, a different kind of thin film like a contact film barrier film with sufficient covering property, on the inner surface of a hole having a high aspect ratio. ;SOLUTION: A sputtering chamber 2 forming a contact film and a CVD chamber 3 forming a barrier film on the contact film are hermetically connected via a separation chamber 1. The separation chamber 1 is provided with a carrying mechanism 11 carrying a substrate 9 in a vacuum, an inert gas introducing system introducing inert gas to the inside, and a control part opening a gate valve after confirming that the pressure in the separation chamber 1 is higher than the pressure of the CVD chamber 3, and the residual gas of the CVD chamber 3 becomes at most a specified level.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:为了能够在真空中在高深宽比的孔的内表面上连续形成另一种类型的薄膜,例如具有足够覆盖性能的接触膜阻挡膜。 ;解决方案:形成接触膜的溅射腔室2和在接触膜上形成阻挡膜的CVD腔室3经由分离腔室1气密连接。分离腔室1设有在基板表面上承载基板9的承载机构11。真空,将惰性气体引入内部的惰性气体引入系统以及在确认分离室1中的压力高于CVD室3的压力以及CVD的残留气体之后打开闸阀的控制部分室3最高为指定高度。版权所有:(C)1999,日本特许厅

著录项

  • 公开/公告号JPH11145084A

    专利类型

  • 公开/公告日1999-05-28

    原文格式PDF

  • 申请/专利权人 ANELVA CORP;

    申请/专利号JP19970329540

  • 发明设计人 KOBAYASHI MASAHIKO;NUMAZAWA YOICHIRO;

    申请日1997-11-12

  • 分类号H01L21/285;C23C14/34;C23C14/56;C23C16/54;H01L21/203;H01L21/205;H01L21/68;H01L21/768;

  • 国家 JP

  • 入库时间 2022-08-22 02:34:36

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