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LOW NOISE AMPLIFIER EMPLOYING MICROWAVE MONOLITHIC IC

机译:低噪声放大器,采用微波单声集成电路

摘要

PROBLEM TO BE SOLVED: To obtain an excellent noise figure characteristic by decreasing a parasitic resistive component, in an input matching circuit in a form of not much disturbing monolithic IC processing. ;SOLUTION: An integrated circuit 16 is provided with an input matching circuit 17 or the like having an amplifier FET 1 and a series spiral inductor 7, and an externally mounted inductor component 18 is placed at the outside of the integrated circuit 16 as a component of the input matching circuit 17 in place of a conventional parallel spiral inductor. Thus, the parasitic resistive component of the parallel inductor 18 in the input matching circuit 17 is reduced more than that of the conventional parallel spiral inductor and the noise figure is greatly enhanced.;COPYRIGHT: (C)1998,JPO
机译:要解决的问题:在输入匹配电路中,通过减少寄生电阻成分来获得极佳的噪声指数特性,这种干扰形式的干扰不大,单片IC处理也很简单。 ;解决方案:集成电路16配备有具有放大器FET 1和串联螺旋电感器7的输入匹配电路17等,并且外部安装的电感器组件18作为组件放置在集成电路16的外部。输入匹配电路17的输入端代替传统的并联螺旋电感器。因此,与传统的并联螺旋电感器相比,输入匹配电路17中的并联电感器18的寄生电阻分量减少了更多,并且噪声系数大大提高了。;版权所有:(C)1998,JPO

著录项

  • 公开/公告号JPH10303661A

    专利类型

  • 公开/公告日1998-11-13

    原文格式PDF

  • 申请/专利权人 NEW JAPAN RADIO CO LTD;

    申请/专利号JP19970123249

  • 发明设计人 KIMIJIMA MASAYUKI;

    申请日1997-04-25

  • 分类号H03F3/60;H01L27/04;H01L21/822;

  • 国家 JP

  • 入库时间 2022-08-22 02:34:26

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