POLISHING MOLDING, POLISHING LEVEL BLOCK AND POLISHING METHOD USING THIS POLISHING MOLDING

摘要

PROBLEM TO BE SOLVED: To provide a polishing molding capable of effective polishing work and a polishing surface plate and a polishing method using this polishing molding whereby waste fluid problem is reduced, a polishing workpiece can be efficiently polished, with a polishing finish of equal degree or more to the conventional method, in a work process polishing a substrate material of semiconductor substrate, oxidized object substrate, etc., of a silicon wafer or the like and an electronic related part of optical material or the like required for accurate work. ;SOLUTION: In a polishing molded unit composed of silica (silicon dioxide), alumina (aluminum oxide), and/or ceria (cerium oxide), bulky density is 0.2 to 3.5 g/cm³, BET specific surface area is 5 to 350 m²/g, and an average grain size is 0.001 to 0.5 μm. This silica is preferable 50 to 95 vol.% relating to the total unit of a polishing molding.;COPYRIGHT: (C)1999,JPO