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CESIUM SPUTTERING TYPE NEGATIVE ION SOURCE

机译:铯溅射型负离子源

摘要

PROBLEM TO BE SOLVED: To provide a cesium sputtering type negative ion source in which a pipe to supply cesium vapor to a chamber containing an ionizer and a target is prevented from being cooled. ;SOLUTION: Cesium vapor produced in a reservoir 11 is supplied to a chamber 1 containing a target 7 and an ionizer 8 through a pipe 9 thermally insulated from the chamber 1. Cesium ion in the cesium vapor which has been made plasmatic by the ionizer 8 is accelerated by a voltage applied by a sputtering power source 17 to collide it against the target 7, and a molecule composing the target 7 is sputtered. The sputtered molecule is made to be a negative ion by passing it in plasma in the inside of the ionizer 8, and the negative ion is taken out by a negative ion leading electrode 16.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种铯溅射型负离子源,其中防止了向包含电离器和靶的腔室中供应铯蒸气的管被冷却。 ;解决方案:在储液罐11中产生的铯蒸气通过与腔室1绝热的管道9供应到包含靶标7和离子发生器8的腔室1中。铯离子中的铯离子已被离子发生器8等离子体化。通过由溅射电源17施加的电压来使S 1加速,以使其与靶7碰撞,从而溅射构成靶7的分子。通过使溅射的分子通过离子发生器8内部的等离子体,使之成为负离子,并通过负离子引出电极16将负离子取出。版权所有:(C)1999,JPO

著录项

  • 公开/公告号JPH11185648A

    专利类型

  • 公开/公告日1999-07-09

    原文格式PDF

  • 申请/专利权人 NISSIN HIGH VOLTAGE CO LTD;

    申请/专利号JP19970351385

  • 发明设计人 YAMADA MASAHIRO;KIMURA TOSHIO;

    申请日1997-12-19

  • 分类号H01J27/20;

  • 国家 JP

  • 入库时间 2022-08-22 02:33:32

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