SELF-BIAS NONMAGNETIC GIANT MAGNETORESISTANCE SENSOR

摘要

PROBLEM TO BE SOLVED: To constitute the self-bias of a Corbino device by providing a magnetoresistive layer where a large zero field offset is produced by doping with mercury cadmium telluride, and a plurality of electrodes fixed to a heterogeneous layer of magnetoresistive material. ;SOLUTION: A heterogeneous magnetoresistive layer 110 of doped mercury cadmium telluride is fixed onto a semiconductor substrate 100 and conduction electrodes 120, 130 are fixed to the magnetoresistive layer 110. A barrier wall layer 105 is inserted between the substrate 100 and the magnetoresistive layer 110. The minimum value of room temperature low field provides a zero field offset of H0-145 gauss and the H0 has same value of opposite sign for a reversed arrangement. Since the sign of offset is altered when a sample is reversed in a field, it can not be caused by a residual field but represents the efftect inherent to the sample. The zero field offset H0 can constitute the self-bias of a Corbino device.;COPYRIGHT: (C)1999,JPO