MARK SUBSTRATE, MANUFACTURE OF MARK SUBSTRATE, ELECTRON-BEAM DRAWING APPARATUS AND ADJUSTING METHOD FOR OPTICAL SYSTEM OF ELECTRON-BEAM DRAWING APPARATUS

摘要

PROBLEM TO BE SOLVED: To form a mark substrate comprising a dot-shaped through-hole having very small diameter. ;SOLUTION: A silicon nitride film 11 is formed on an Si (110) substrate 10 with a thickness of 500 nm. The silicon nitride film 11 is coated into a thickness of 0.5 μm, with a positive resist 12 for an electron beam. A groove 13, whose long direction is parallel with a direction along the (1 -1 1) lattice plane of the substrate 10 is formed on the silicon nitride film 11. A silicon nitride film 14 is formed also on the rear of the substrate 10. Then, a groove 15, whose long direction is parallel with a direction along a (-1 1 1) plane, is formed, while the silicon nitride films 11, 14 are used as masks, the substrate 11 is etched anisotropically by using a KOH aqueous solution, and grooves are formed on the surface and the rear of the substrate 10. Then, the silicon nitride films 11, 14 are stripped.;COPYRIGHT: (C)1999,JPO