首页> 外国专利> SEMICONDUCTOR MANUFACTURING APPARATUS EQUIPPED WITH ELECTROSTATIC ATTRACTION DEVICE WITH FOREIGN MATTER REMOVAL FUNCTION

SEMICONDUCTOR MANUFACTURING APPARATUS EQUIPPED WITH ELECTROSTATIC ATTRACTION DEVICE WITH FOREIGN MATTER REMOVAL FUNCTION

机译:配备有静电吸附装置的半导体制造设备,该装置具有异物去除功能

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor manufacturing apparatus in which a foreign matter existing in an electrostatic attraction part coming into contact with the backside of a wafer to be treated is transferred to a sheetlike member so as to be removed by a method wherein the sheetlike member installed in a wafer converance route is attracted by applying a voltage in such a way that its charged polarity is opposite to that of the foreign matter irrespective of the polarity of the applied voltage in the attraction of the wafer to be treated. ;SOLUTION: A sheetlike member 10 capable of covering a part coming into contact with the backside of a wafer 9 to be treated is attracted in the same manner as in an ordinary wafer, to be treated, so as to be conveyed, and a foreign matter 14 in a part with which the backside of the wafer 9 comes into contact is transferred to the side of the sheetlike member 10 so as to be removed. At this point, irrespective of the polarity of an applied voltage in the attraction of the wafer 9, a voltage whose polarity is opposite to the polarity of the foreign matter 14 is applied to an electrostatic attraction arm, the sheetlike member 10 is attracted, and the foreign matter 14 is stuck easily to the side of the sheetlike member 10. Here, when the foreign matter 14 on the surface of, e.g. a dielectric 11 is charged with electricity to be negative, a negative voltage is applied to an electrode 12, and the foreign matter 14 is repelled so as to be transferred to the side of the wafer 9. Thereby, the electrostatic attraction arm is kept in a clean state.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:为了获得一种半导体制造设备,其中存在于与待处理晶片的背面接触的静电吸引部分中的异物被转移到片状构件上,并通过一种方法去除,该方法包括:通过以如下方式施加电压来吸引安装在晶片会聚路径中的片状构件,即,其带电极性与异物的极性相反,而与待处理晶片的吸引中所施加的电压的极性无关。 ;解决方案:能够覆盖与要处理的晶片9的背面接触的部分的片状构件10以与普通要处理的晶片相同的方式被吸引,从而被输送和运送到外部。与晶片9的背面接触的部分中的杂质14被转移到片状构件10的一侧以被去除。此时,与晶片9的吸引中所施加的电压的极性无关,将与异物14的极性相反的极性的电压施加至静电吸引臂,片状部件10被吸引,异物14容易附着在片状部件10的侧面上。电介质11被充以负电,负电压被施加到电极12,并且异物14被排斥,从而被转移到晶片9的侧面。由此,静电吸引臂被保持在清洁状态。;版权:(C)1999,JPO

著录项

  • 公开/公告号JPH1187457A

    专利类型

  • 公开/公告日1999-03-30

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19970250269

  • 申请日1997-09-16

  • 分类号H01L21/68;

  • 国家 JP

  • 入库时间 2022-08-22 02:32:34

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