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METHOD FOR SYNTHESIZING SINGLE CRYSTAL MATERIAL UTILIZING SOLIDIFICATION WITH SUPERCOOLING IN MICROGRAVITY ENVIRONMENT

机译:微重力环境中超冷合成单晶凝固凝固方法

摘要

PROBLEM TO BE SOLVED: To provide a method for simply synthesizing a single crystal by rapidly cooling a melt in a supercooled state of a metal, metalloid or semiconductor at a specified temp. lowering rate or higher to subject the melt to unidirectional solidification. ;SOLUTION: In this method, a raw material used is a material of metal, metalloid or semiconductor, each of which normally has a ≤100°C, or preferably, ≥150°C melting point. As the material, a material having a ≥5°C, or preferably, ≥10°C temp. difference (Tm-Ts) between the melting point (Tm) and the maximum supercooling temp. (Ts) is preferably used, wherein the upper limit of the temperature difference (Tm-Ts) is normally about 10°C. Metals that can be used as the material, include both single-elemental metals and alloys. As the alloys, particularly, those whose single crystals have high usefulness, such as In-Sb and Ti-Ni alloys, can preferably be used. This method involves rapidly cooling a melt in a supercooled state of such a material at a ≥100°C/sec cooling rate.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种通过在指定温度下快速冷却金属,准金属或半导体的过冷状态的熔体来简单合成单晶的方法。降低速率或更高以使熔体单向凝固。 ;解决方案:在这种方法中,所使用的原材料是金属,准金属或半导体的材料,通常每种材料的熔点均≤100°C,或优选地≥150°C。作为材料,具有≥5℃,或优选≥10℃温度的材料。熔点(T m )和最大过冷温度之间的差(T m -T s )。优选使用(T s ),其中温差(T m -T s )的上限通常为约10℃。 。可以用作材料的金属包括单元素金属和合金。作为合金,特别地,可以优选地使用诸如In-Sb和Ti-Ni合金之类的具有单晶有用性的合金。该方法涉及以≥100°C /秒的冷却速度在这种材料的过冷状态下快速冷却熔体。;版权:(C)1999,JPO

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