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摘要

PURPOSE: To realize good selectivity in the MOVPE selective growth of a compound semiconductor crystal which contains Al and to realize selective buried growth in the MOVPE selective buried growth of a compound semiconductor crystal which contains Al. ;CONSTITUTION: An SiN_x mask 2 is formed on a GaAs substrate 1, trimethylaluminum(TMAl) is used as an Al raw material, and GaAlAs is selectively grown by an MOVPE operation. When nitrogen or an inert gas is used as a carrier gas which transports the Al raw material, the reaction of the A(raw material with a mask material is prevented, and the AQ raw material can be evaporated again from the mask material. Thereby, good selectivity can be obtained under an ordinary low-pressure growth condition without using HCl gas whose purity is problematic.;COPYRIGHT: (C)1996,JPO