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Amendment manner null of production error of reticule and exposure device for semiconductor device production

机译:用于半导体器件生产的掩模版和曝光器件的生产误差的修正方式无效

摘要

PURPOSE:To decrease pattern aligning errors by measuring the magnification errors of the production errors of a reticle prior to exposing and executing exposing after correcting the magnification. CONSTITUTION:Marks 4 for correcting the production errors are formed at =4 points at the circumference of pattern forming parts on the reticle. Microscopic errors, distortion of lenses, etc., are removed before measurement of the reticle production errors. Namely, the positional relations between the slit 2 of a microscope 9 and the marks 6 on a stage are measured. The reticle 3 is loaded by the aligner and the mark positions are compared with the marks 6 on the stage through a projecting lens 5. The scanning position of the stage 7 is measured by a laser interference meter 8. The reticle production errors are exactly corrected.
机译:目的:通过在曝光之前测量光罩的生产误差的放大误差,并在校正放大倍数后执行曝光,来减少图案对准误差。组成:用于校正生产误差的标记4形成在标线板上图案形成部分圆周的> = 4点处。在测量分划板生产误差之前,应消除微观误差,透镜变形等。即,测定显微镜9的狭缝2与载物台上的标记6之间的位置关系。掩模版3由对准器加载,并且标记位置通过投射透镜5与镜台上的标记6进行比较。镜台7的扫描位置由激光干涉仪8测量。掩模版生产误差被精确地校正。 。

著录项

  • 公开/公告号JP2924635B2

    专利类型

  • 公开/公告日1999-07-26

    原文格式PDF

  • 申请/专利权人 NIPPON DENKI KK;

    申请/专利号JP19940071445

  • 发明设计人 TAKAOKA HAJIME;

    申请日1994-03-16

  • 分类号G03F1/08;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:15

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