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A THIN SEMICONDUCTOR DEVICE, FABRICATION PROCESSES FOR A THIN FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAYS, FABRICATION PROCESSES FOR LIQUID CRYSTAL DISPLAYS, (SEE FILE FOR FULL TITLE)
A THIN SEMICONDUCTOR DEVICE, FABRICATION PROCESSES FOR A THIN FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAYS, FABRICATION PROCESSES FOR LIQUID CRYSTAL DISPLAYS, (SEE FILE FOR FULL TITLE)
A high-performance thin film semiconductor device manufactured through a low-temperature process in which an inexpensive glass substrate can be used. In the process, a mixed crystal semiconductor film of high crystallinity is formed by a PECVD method using silane of a raw material gas and argon of a diluting gas, and then the crystallinity is raised by laser beam irradiation. Liquid crystal displays and electronic apparatuses are manufactured by using such a semi-conductor device. When this invention is applied to the manufacture of an active matrix liquid crystal display, a large-sized high-quality liquid crystal display is manufactured easily and stably. When this invention is applied to the manufacture of other electronic circuits, high-quality electronic circuits are also manufactured easily and stably.
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