首页> 外国专利> A THIN SEMICONDUCTOR DEVICE, FABRICATION PROCESSES FOR A THIN FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAYS, FABRICATION PROCESSES FOR LIQUID CRYSTAL DISPLAYS, (SEE FILE FOR FULL TITLE)

A THIN SEMICONDUCTOR DEVICE, FABRICATION PROCESSES FOR A THIN FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAYS, FABRICATION PROCESSES FOR LIQUID CRYSTAL DISPLAYS, (SEE FILE FOR FULL TITLE)

机译:薄型半导体设备,薄型半导体设备的制造过程,液晶显示,液晶显示器的制造过程(请参阅完整标题的文件)

摘要

A high-performance thin film semiconductor device manufactured through a low-temperature process in which an inexpensive glass substrate can be used. In the process, a mixed crystal semiconductor film of high crystallinity is formed by a PECVD method using silane of a raw material gas and argon of a diluting gas, and then the crystallinity is raised by laser beam irradiation. Liquid crystal displays and electronic apparatuses are manufactured by using such a semi-conductor device. When this invention is applied to the manufacture of an active matrix liquid crystal display, a large-sized high-quality liquid crystal display is manufactured easily and stably. When this invention is applied to the manufacture of other electronic circuits, high-quality electronic circuits are also manufactured easily and stably.
机译:通过低温工艺制造的高性能薄膜半导体器件,其中可以使用便宜的玻璃基板。在该过程中,使用原料气体的硅烷和稀释气体的氩气通过PECVD方法形成高结晶度的混合晶体半导体膜,然后通过激光束照射来提高结晶度。通过使用这种半导体装置来制造液晶显示器和电子设备。当将本发明应用于有源矩阵液晶显示器的制造时,容易且稳定地制造大型高质量液晶显示器。当本发明应用于其他电子电路的制造时,也容易且稳定地制造高质量的电子电路。

著录项

  • 公开/公告号SG53556A1

    专利类型

  • 公开/公告日1999-05-25

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号SG1997063390

  • 发明设计人 MITSUTOSHI MIYASAKA;

    申请日1996-08-07

  • 分类号H01L21/205;H01L21/786;

  • 国家 SG

  • 入库时间 2022-08-22 02:25:56

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