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Noise filtering circuit of a local oscillator.

机译:本地振荡器的噪声过滤电路。

摘要

CIRCUIT DESCRIBED NOISE REJECTION OF LOCAL oscillator having a resistor between the output of a MES FET / HEMT AND EARTH. This resistance has the effect of introducing a bypass arrangement AUTOMATIC CIRCUIT OSCILLATOR means that when there is an increase in current through the device MES FET / HEMT, the voltage drop across the resistor A also increases. WHEN THE DOOR ATTACHED TO EARTH THROUGH low resistance (51 OG}) This leads to a gate voltage TO SOURCE NEGATIVE INCREASED WHICH MAKES THE DEVICE strangulation SLIGHTLY, which in turn, produces a reduced level CURRENT through the device. This assembly therefore has the effect of reducing BRUSCO ANY INCREASE POWER DEVICE AND PRODUCE IN improved phase noise. FITTING IN A PREFERRED SITUA RESISTOR 30 OHM between the source of FET / HEMT AND EARTH, resistance is placed withinthe SERIES PRINTED CIRCUIT INDUCTOR AND line. WITH MODIFIED said circuit, it has been measured performance improvement phase noise for the circuit DIO standard DBC a figure of -64. A 10 KHZ. AFTER USING THE MENTIONED CIRCUIT MODIFICATIONS PREVIOUSLY OBTAINED A figure of -76 DBC. A 10 KHZ WHICH IS IMPROVED APPROXIMATELY 16 times.
机译:电路描述的本地振荡器的噪声抑制在MES FET / HEMT的输出与地之间具有电阻。该电阻具有引入旁路电路的作用。自动电路振荡器意味着当流经MES FET / HEMT器件的电流增加时,电阻A两端的压降也会增加。当门通过低电阻(51 OG}接地时,这会导致栅极电压源极增大,从而使器件略微勒死,进而使通过器件的电流降低。因此,该组件的作用是减少BRUSCO的任何增加的功率设备,并减少相位噪声。在FET / HEMT源与地之间的30欧姆电阻中安装电阻,在串联印刷电路电感和线路内放置电阻。用所述电路进行了改进,已为电路DIO标准DBC测量了性能改善的相位噪声-64的数字。 10 KHZ。使用先前提到的电路修改后,可获得-76 DBC的数字。 10 KHZ大约可提高16倍。

著录项

  • 公开/公告号ES2129967T3

    专利类型

  • 公开/公告日1999-06-16

    原文格式PDF

  • 申请/专利权人 CAMBRIDGE INDUSTRIES LIMITED;

    申请/专利号ES19960914302T

  • 发明设计人 ORR JOHN PETER;

    申请日1996-05-17

  • 分类号H03B5/18;

  • 国家 ES

  • 入库时间 2022-08-22 02:24:25

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