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Nanoporous silica dielectric films modified by electron beam exposure and havinglow dielectric constant and low water content
Nanoporous silica dielectric films modified by electron beam exposure and havinglow dielectric constant and low water content
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机译:通过电子束曝光改性的纳米多孔二氧化硅介电膜,介电常数低,含水量低
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摘要
Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.
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