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EMITTER TURN-OFF THYRISTORS (ETO)

机译:发射极关断晶闸管(ETO)

摘要

A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor on and off. In an embodiment of the invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors (10, 20), the first of which is connected in series with the thyristor (2) and a second which provides a negative feedback to the thyristor gate. A negative voltage applied to the gate of the first MOS transistor (10) causes the thyristor to turn on to conduct high currents. A zero to positive voltage applied to the first MOS gate causes the thyristor to turn off. The negative feedback insures that the thyristor only operates at its breakover boundaries of the latching condition with the NPN transistor portion of the thyristor operating in the active region. Under this condition, the anode voltage Va continues to increase without significant anode current increase.
机译:一系列由发射极控制的晶闸管采用多种控制方案来接通和关断晶闸管。在本发明的一个实施例中,公开了一种晶闸管家族,它们全部包括一对MOS晶体管(10、20),它们中的第一个与晶闸管(2)串联连接,而第二个对晶体管提供负反馈。晶闸管门。施加到第一MOS晶体管(10)的栅极的负电压使得晶闸管导通以传导大电流。施加到第一MOS栅极的零电压至正电压会使晶闸管截止。负反馈确保晶闸管仅在其锁存条件的分界边界处工作,而晶闸管的NPN晶体管部分在有源区域中工作。在这种条件下,阳极电压Va继续增加而阳极电流没有明显增加。

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