Modeling Method for Reduced Surface Field Transverse Double-Diffusion Morse Transistor Using Silicon-on-Insulator Substrate

摘要

A modeling method for a reduced surface electric field (RESURF) type lateral double-diffusion MOS (LDMOS) transistor using a silicon-on-insulator (SOI) substrate is disclosed. By representing the breakdown voltage BVVF of the transistor as a function of the concentration Nepi of the drift region and the thickness Tbox of the buried oxide layer, the optimum length Ldr and the thickness of the drift region are applied by applying the condition that the breakdown in the horizontal direction and the vertical breakdown occur simultaneously. Find the depi. In addition, the on-resistance RON of the transistor is represented by the term of the channel resistance Rch and the resistance Rdr of the drift region, so that the optimum on-resistance RON using the length Ldr and the concentration Nepi of the optimum drift region obtained from the breakdown voltage BVVF is obtained. Obtain