METHOD FOR MANUFACTURING DEFECT-FREE COMPOUND SEMICONDUCTOR THIN FILM ON DIELECTRIC THIN FILM

摘要

The present invention relates to a method for producing a compound semiconductor semiconductor thin film having a defectless semiconductor lattice structure on a dielectric thin film.;The present invention is carried out on a multi-layered structure having a heterogeneous compound semiconductor thin film GaAs, InGaAs or InAs layer on the AlGaInAs-based thin film layer to which a high concentration of carbon impurity is added. According to the present invention, an effect of rapidly growing a thin film layer of a heterogeneous compound semiconductor on an Al ₂ O ₃ thin film layer as a dielectric without defects