A semiconductor memory device employing an internal power supply voltage level control circuit and an internal power supply voltage level control method therefor

摘要

A semiconductor memory device employing an internal power supply voltage level control circuit and an internal power supply voltage level control method therefor are described. In accordance with another aspect of the present invention, a semiconductor memory device includes a separate internal power supply voltage level control circuit connected to a first capacitor charged with a first voltage level for supplying an internal power supply voltage, and including two switching elements and a second capacitor. I adopt it. By using the internal power supply voltage level control circuit, the second capacitor is charged to a second voltage level higher than the first voltage level during the precharge period of the row address strobe signal, and during the activation period of the row address strobe signal. The charge charged in the second capacitor is distributed to the first capacitor to increase the voltage level of the first capacitor and then perform a data sensing operation. Thus, the sense amplifier operation speed is increased, and the restore time is reduced.