Fabrication of SNO2 Thin Films for Gas Sensors from SN Taeget using Dual-ion Beam Sputtering

摘要

The present invention relates to a method for manufacturing a SnO ₂ thin film for a gas sensor from Sn Taagett using double ion beam sputtering. The desired type of substrate is washed with a cleaning agent and ultrapure water, dried, adhered to a substrate holder, And when the vacuum pressure reaches a high vacuum of 2.0 X 10 ^-6 Torr, argon is supplied to the auxiliary ion gun and an RF plasma is generated to ion-clean the substrate with ion current of 300 eV and 0.5 mA / cm ² for several minutes, And then, after the cleaning is completed, the shutter is closed and argon is supplied to the main ion gun to sputter Sn tacket. At the same time, oxygen is supplied to the auxiliary ion gun to generate plasma, and then acceleration and stabilizing the opening when the shutter forming a thin film as long as a desired thickness and improved on a SnO ₂ thin film produced as described above determines the stability of the thin film An excellent quality of SnO _2, which may shorten the heat treatment step after the consists of a step of performing a heat treatment for 2 hours or more at 350 to 600 ℃ depositing SnO ₂ for a stoichiometric composition at a low temperature the crystalline control the gas sensor in order to improve .