首页> 外国专利> Densification of Al2O3-SiC nanocomposites by densification of specimen surface layer by sintering atmosphere and sinter plus HIP process using it

Densification of Al2O3-SiC nanocomposites by densification of specimen surface layer by sintering atmosphere and sinter plus HIP process using it

机译:通过烧结气氛和使用烧结加HIP工艺对样品表面层进行致密化来致密化Al2O3-SiC纳米复合材料

摘要

The present invention relates to a method of sintering a sinter plus hot isostatic press (sinter plus HIP)2O3-SiC /RTI nanocomposite (nano-composite).;Al (Al) particles obtained by micronizing raw material powder2O3-SiC composite material is a single-phase Al2O3But it is very difficult to densify. Therefore, a hot press or a high-temperature atmospheric pressure sintering method is used. However, since both sintering methods have various problems to be applied to product production, sinter plus HIP process is considered to be an optimum sintering method for production of high temperature structural ceramics composite materials. However, in this case, the precondition is that the pores of the psalm must be discarded. SUMMARY OF THE INVENTION [2O3In order to densify the SiC nanocomposites, only the surface of the specimen can be densified at low sintering temperature by using nitrogen and hydrogen atmosphere in the sintering process, and all the pores in the specimen are discarded and hot isostatic pressing is performed. Sintering furnace to achieve complete densification.;The present invention relates to a method for manufacturing ceramics using a sinter plus HIP process which is most reliable for densification of ceramic materials,2O3-SiC nanocomposite material is completely densified. For this purpose, by inventing the sintering process to be performed at a low sintering temperature, the application range of the material is widened and the effect of facilitating the production is obtained.
机译:本发明涉及一种烧结加热等静压机(烧结加HIP)2 <Sub> O <Sub 3 <Sub 3 -SiC>纳米复合材料(纳米复合材料)的方法。 ;将原料粉末 2 O 3 -SiC复合材料微粉化得到的Al(Al)颗粒为单相Al 2 O 3 但是很难致密化。因此,使用热压或高温大气压烧结方法。然而,由于两种烧结方法都具有要应用于产品生产的各种问题,因此烧结加HIP工艺被认为是用于生产高温结构陶瓷复合材料的最佳烧结方法。但是,在这种情况下,前提是必须丢弃诗篇的毛孔。发明内容[ 2 O 3 为了使SiC纳米复合材料致密化,在低烧结温度下,通过在氮气和氢气气氛下仅对样品的表面进行致密化即可。烧结过程中,样品中的所有孔都被丢弃,并进行热等静压。烧结炉以实现完全致密化。本发明涉及一种使用烧结加HIP工艺制造陶瓷的方法,该方法对于陶瓷材料 2 O 3 -SiC纳米复合材料被完全致密化。为此,通过发明在低烧结温度下进行的烧结工艺,扩大了材料的应用范围并且获得了促进生产的效果。

著录项

  • 公开/公告号KR19990052134A

    专利类型

  • 公开/公告日1999-07-05

    原文格式PDF

  • 申请/专利权人 채기웅;

    申请/专利号KR19970071577

  • 发明设计人 채기웅;전진수;

    申请日1997-12-22

  • 分类号C04B35/565;

  • 国家 KR

  • 入库时间 2022-08-22 02:17:01

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