Phase error measurement mask and phase error measurement method using the same

摘要

The present invention relates to a mask for measuring phase error and a method of measuring phase error using the same. Phase error of the present invention to precisely measure the phase error of a phase shift mask (PSM) used when performing a photo development process with a light source having an exposure wavelength of 100 to 436 nm in the manufacturing process of a semiconductor device. In the mask for measurement, a phase inverter pattern is formed on a selected portion of the transparent substrate, and a plurality of chromium patterns are repeatedly formed at a distance of more than twice the exposure wavelength from the phase inverter pattern.$180$Phase inverts having a phase of? Are produced to be alternately formed. Each of the phase inverter pattern and the chromium pattern is formed to have a length of two times or more and a width of two times or less with respect to the exposure wavelength. Photoresist patterns are formed on the wafer by a photolithography process using a mask for measuring phase error, and a photoresist pattern corresponding to a critical dimension (CD) and a phase inverted pattern of the photoresist pattern corresponding to the chromium pattern are formed. The phase error is measured by simulating the line width of the chromium pattern and the phase width of the phase inverter pattern having the same critical dimension.