Thin film transistor substrate and manufacturing method using molybdenum and molybdenum alloy

摘要

Molybdenum, or a mixture of tungsten and molybdenum is deposited on a substrate to form a wiring for a semiconductor device. Particularly, when the gate / data wiring of the liquid crystal display device is formed, the molybdenum alloy exhibits an etching ratio similar to that of aluminum or an aluminum alloy having a low resistance to an aluminum etching solution, so that the wiring is made of a molybdenum alloy and a double A gentle slope etching is possible in the case of a film. Further, when the transparent conductive film is formed of the ITO film, the dry etching gas Cl₂+ O₂+ Ar. /RTI Particularly, in the manufacturing process using the four-layer mask, the ITO film and the molybdenum or molybdenum-tungsten alloy film are simultaneously etched at the same time in order to expose the doped amorphous silicon film. Further, the molybdenum or molybdenum-tungsten alloy film and the amorphous silicon film are simultaneously etched at the same time. At this time, by dry etching, Cl₂+ O₂+ Gradient etching is possible with Ar gas.