Determination of trace metal contaminants in ammonium hydroxide samples for semiconductor processing

摘要

The present invention relates to a method for analyzing trace metal contaminants in a sample of ammonium hydroxide for semiconductor processing.;In the method for analyzing trace metal contaminants in a semiconductor process sample according to the present invention, the temperature profile of each step is omitted in the method for analyzing metal elements using an atomic absorption spectrometer consisting of a drying step, a carbonization step, a quenching step and an atomization step. It is characterized by an optimization that can be done.;Therefore, by optimizing the temperature profile of the high temperature graphite analyzer analysis program of the conventional atomic absorption spectrometer, there is an effect that it is possible to effectively analyze iron and sodium metal contaminants in ammonium hydroxide by omitting the pretreatment process.