Has a high manufacturing yield of a high-temperature and high-output operation when the stable self-in self-oscillation type semiconductor laser which can oscillate, in order to generate a stable oscillation, the current is designed to be diffused in a lateral direction is large saturation possible absorption region of the active layer is It is protected so as not to diffuse the light spot. Therefore, the thickness d of the p-type AlGaInP Cloud deucheung having a current blocking layer, for example, d ≤ 400nm, and preferably is set such that d ≤ 350 nm, corresponding to a transverse wave guide portion and both sides thereof corresponding to the stripe portion in order to maintain the refractive index difference △ n (= n1-n2) between the part to a value between 0.001 and 0.003 in sikilsu generating a continuous oscillation with that, n-type AlGaInP Cloud thickness of the guide layer on the de-layer side is a p-type AlGaInP Cloud deucheung thicker than that of the guide layer on the screen to be asymmetric a SCH structure.
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