BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion sensor and a method of manufacturing the same, wherein a silicon substrate 1, a source 2, a drain 3, a silicon oxide film 4, a silicon nitride film 5, an aluminum metal electrode 6, and an ion sensing device In the field effect transistor type ion sensor composed of the membrane (7), the ion sensing membrane (7) is formed on the lipophilic polymer film (11) to form a hydrophilic polymer sensing membrane (12) containing a sensing material to have a double membrane structure The low sensitivity and sensitivity to hydrogen ions present in the aqueous solution as well as the ions to be measured in the aqueous solution prevented the formation of an insulating waterproof film with a lipophilic polymer on the base of the field effect transistor pH sensor (pH-ISFET). Phosphorus polymer is used as an external sensing film to increase the diffusion speed of the solution to be measured in aqueous solution to shorten the response time and improve the sensitivity. Requester is an ion sensor, and a manufacturing method using the pH sensor.
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