APPARATUS AND METHOD FOR CLEANING SUBSTRATE AND HIGH SPEED DEPOSITIONING HIGH QUALITY AMORPHOUS THIN Si FILM FOR TFT-LCD USING PULSE-LIKE ECR PLASMA

摘要

The present invention eliminates the problems caused when manufacturing a thin film transistor liquid crystal display device using a conventional diode-type RF PECVD, and solves the problem of productivity decrease due to heating or cooling during deposition and productivity decrease due to low deposition rate. For example, a device and a method for depositing a denser and larger dielectric constant by applying a pulse to a microwave and repeating an initial condition are proposed. In addition, the present invention also proposes a substrate cleaning method for making a very flat substrate by modifying the apparatus and method.