PROCESS TECHNOLOGY FOR FABRICATING FIELD EMISSION DISPLAY DEVICE

摘要

The present invention relates to a method for manufacturing a field emission display device having a silicon tip, by using a thermal oxide film of the prior art as a masking layer to perform silicon etching, the manufacturing process is complicated and the electron emission efficiency of the tip is reduced, In order to solve the problem that the frequency of occurrence was high, the present invention obtains a silicon tip having an under-cut cross-sectional shape by etching a silicon substrate using a photoresist pattern as a masking layer, After the silicon substrate is etched and formed simultaneously on the silicon tip and at the portions other than the silicon tip, the deposition oxide films having poor step coverage are formed separately from each other, thereby reducing the manufacturing process and improving the yield by reducing the frequency of flaw generation, The effect of improving the release efficiency can be obtained.