INTEGRATED INJECTION LOGIC STRUCTURE AND MANUFACTURING METHOD OF THE SAME

摘要

The present invention relates to a structure of an integrated injection logic that can improve the current amplification efficiency by changing the structure of the fan-out region in the integrated injection logic, and the configuration of the present invention comprises a P-type substrate; An N-type buried layer in which N-type ions are injected into a portion of an upper portion of the P-type substrate; An N-type epitaxial layer epitaxially grown on an upper portion of the P-type substrate and an upper portion of the N-type buried layer; First and second sink layers formed by implanting N-type ions on both ends of the N-type buried layer; First and second P-type isolation layers formed by injecting P-type impurities from a surface to a place where the N-type buried layer is vertically formed; An N-type tube layer formed by implanting N-type ions into an upper portion of an epitaxial layer formed inside the first and second sink layers; A first P-type layer formed by implanting P-type ions on the upper portion of the low concentration epitaxial layer; A plurality of P-type layers each having a distribution of a high concentration P-type layer and a low concentration P-type layer horizontally on top of the N-type tube layer; First, second and third N-type base layers formed by injecting N-type ions into the upper portions of the first, second and third low concentration P-type layers; The first sink, the first P-type layer, the high-concentration P-type layer, and a plurality of contacts respectively formed on top of the first, second, and third N-type base layer, and the effect of the present invention is that the high-concentration P-type layer is fan-out. The integrated injection logic improves the characteristics of the entire device by isolating each part, making the first, second, and third fan-outs operate almost independently, and equalizing the efficiency of each current amplification factor. The structure and its manufacturing process can be provided.