PROCESS AND APPARATUS FOR PRODUCING CONDUCTIVE LAYERS OR STRUCTURES FOR CIRCUITS INTEGRATED ON THE VERY LARGEST SCALE

摘要

In a method of making a conductive layer or structure for an ultra-high density integrated circuit, at least two process steps are carried out directly in the various chambers 1 to 6 of the high vacuum equipment without interrupting the high vacuum conditions for the semiconductor substrate. Avoiding exposure to air between process steps substantially delivers better layer properties and enables a simple and reliable multi-step method for producing a conductive layer that preferably supports multi-layered metal wiring on a semiconductor substrate. The apparatus used consists of a plurality of high vacuum process chambers 1 to 6, at least one high vacuum distribution chamber 7 connecting the process chambers, and at least two high vacuum supply chambers for the semiconductor substrate.