PROCESS OF FABRICATING FIELD EFFECT TRANSISTOR HAVING RELIABLE POLYCIDE GAYE ELECTRODE

摘要

The field effect transistor has a polyside structure 27 having doped polysilicon stripes 23d on the gate oxide layer 22 and crystalline tungsten silicide stripes 24c on the doped polysilicon stripes 23d. The polyside structure comprises the steps of patterning the amorphous tungsten silicide layer 24a into amorphous tungsten silicide stripes 24b, and the stepped crystallization of the amorphous tungsten silicide stripes 24b, doped with the doped polysilicon layer 23a. Patterned into polysilicon stripes 23d, thereby preventing the crystalline tungsten silicide stripes from unwanted distortion without contamination of the gate oxide layer 22.