A METHOD OF FABRICATING A MOS TRANSISTOR HAVING LDD STRUCTURE

摘要

The present invention relates to a MOS transistor having a fully overlapped LDD (Lightly Doped Draln) structure, which is excellent in resistance to hot carriers and current driving capability, and has a very simplified process.;The method of manufacturing a semiconductor device of the present invention comprises the steps of forming a gate insulating film and a polycrystalline silicon film on a silicon substrate, forming a gate forming photosensitive film on the polycrystalline silicon film, and etching the polycrystalline silicon film primarily using the photosensitive film as a mask. A process of forming a high concentration source / drain region by ion implantation of a high concentration of impurities, a second etching of the polycrystalline silicon film to form a gate having a gentle side, and ion implantation of a low concentration of impurities into the substrate And forming a low concentration impurity region adjacent to the high concentration impurity region.