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New silicon nitride material has a high silicon dioxide content, a sub-micron grain size and a low defect content

机译:新型氮化硅材料具有较高的二氧化硅含量,亚微米粒度和较低的缺陷含量

摘要

A new silicon nitride material has a high silicon dioxide content, a sub-micron grain size and a low defect content. A silicon nitride material has, in the sintered condition, a molar ratio of silicon dioxide to the sum of the silicon dioxide and other sintering additives of greater than 50 %, a mean particle size of = 0.3 mu and a content of = 5000/mm2 of defects with a maximum linear dimension of greater than 3 mu . An Independent claim is also included for production of the above silicon nitride material, in which the Si3N4 powder is thermally oxidized alone or together with sintering additives, mixed with finely dispersed SiO2 powder, subjected to intensive grinding, alone or together with sintering additives and/or mixed with a material containing a SiO2-forming component before or during grinding, followed by sintering, pressure sintering, hot pressing or hot isostatic pressing.
机译:一种新的氮化硅材料具有较高的二氧化硅含量,亚微米粒度和较低的缺陷含量。在烧结条件下,氮化硅材料的二氧化硅与二氧化硅和其他烧结添加剂之和的摩尔比大于50%,平均粒径<= 0.3微米,含量<= 5000 / mm 2的缺陷的最大线性尺寸大于3μm。还包括用于生产上述氮化硅材料的独立权利要求,其中,单独地或与烧结添加剂一起将Si 3 N 4粉末热氧化,将其与细分散的SiO 2粉末混合,单独或与烧结添加剂和/或一起进行强烈研磨。或在研磨前或研磨过程中与含有SiO2形成成分的材料混合,然后进行烧结,压力烧结,热压或热等静压。

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