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process for the selective etching of gaas on algaas
process for the selective etching of gaas on algaas
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机译:在藻类上选择性蚀刻gaas的方法
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摘要
A method of semiconductor device fabrication uses a mixture of SiCl4, CF4, O2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.
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