METHOD FOR CONTROLLING AT LEAST ONE IGBT-TYPE TRANSISTOR CAPABLE OF ALLOWING THEIR OPERATION UNDER IRRADIATION

摘要

The present invention relates to a method for controlling at least one transistor of the IGBT type capable of enabling it to operate under irradiation, in which the threshold value Vges of the gate-emitter voltage of a first IGBT transistor is measured ( 30) under irradiation and the voltage applied in operation between gate and emitter of the at least one second IGBT transistor is varied in irradiation so as to control the threshold voltage Vges of this second IGBT transistor (s) to a set value despite the drift caused by the irradiation. /P