首页> 外国专利> Controlling the drain voltages of a two-stage FET rf amplifier to control the ouput level and improve efficiency

Controlling the drain voltages of a two-stage FET rf amplifier to control the ouput level and improve efficiency

机译:控制两级FET射频放大器的漏极电压以控制输出电平并提高效率

摘要

A dual drain control uses a variable voltage supply on the drains of a first stage (302) and a second stage (304) to control the output power. In particular, dual drain control having a 1:1 ratio is employed at lower power levels, with single drain control at higher power levels. Such drain control could use signals from a microprocessor, or a specific circuit (203) to generate the drain voltages based upon a control voltage. Use in a cellular telephone is described. The efficiency is improved.
机译:双漏极控制在第一级(302)和第二级(304)的漏极上使用可变电压电源以控制输出功率。特别地,在较低功率水平下采用具有1:1比率的双漏极控制,而在较高功率水平下采用单漏极控制。这样的漏极控制可以使用来自微处理器或特定电路(203)的信号来基于控制电压来生成漏极电压。描述了在蜂窝电话中的使用。效率得到提高。

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