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Method for verifying electrically programmable non-volatile memory cells of an electrically programmable non-volatile memory device after programming
Method for verifying electrically programmable non-volatile memory cells of an electrically programmable non-volatile memory device after programming
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机译:编程后验证电可编程非易失性存储装置的电可编程非易失性存储单元的方法
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摘要
A method for verifying an electrically programmable non- volatile memory cell of an electrically programmable memory device after programming, providing for accessing the memory cell after having submitted the same to at least a programming pulse by means of a sensing circuit, checking an output of the sensing circuit, and submitting said memory cell to further programming pulses if said output of the sensing circuit corresponds to a non-programmed memory cell. The checking an output of the sensing circuit is performed at a first instant of time which is anticipated of a prescribed time interval with respect to a second instant of time at which said output of the sensing circuit is checked in a normal read operation of the memory device, said prescribed time interval corresponding to a prescribed security margin of programming of the memory cell. (FIGS. 2 and 4).
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