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Defect insertion testability mode for IDDQ testing methods

机译:IDDQ测试方法的缺陷插入可测试性模式

摘要

A Defect Insertion Testability Mode for IDDQ Testing to detect defects in a semiconductor device and for accuracy correction during testing. In one embodiment of the present invention a screen condition and a known defect current are selected for the device under test (DUT). The DUT is screened without a known defect current being inserted and then is screened again with a known defect current inserted. The results of screening the DUT with and without the known defect current are then compared and the screen condition is adjusted based upon this comparison in order to increase the accuracy of the IDDQ test.
机译:缺陷插入可测试性模式,用于IDDQ测试,以检测半导体器件中的缺陷并在测试过程中进行准确性校正。在本发明的一个实施例中,为被测器件(DUT)选择屏蔽条件和已知的缺陷电流。在没有插入已知缺陷电流的情况下对DUT进行屏蔽,然后在插入已知缺陷电流的情况下再次对其进行屏蔽。然后比较带有和不带有已知缺陷电流的DUT的屏蔽结果,并根据此比较来调整屏蔽条件,以提高IDDQ测试的准确性。

著录项

  • 公开/公告号US5869977A

    专利类型

  • 公开/公告日1999-02-09

    原文格式PDF

  • 申请/专利权人 INTEL CORPORATION;

    申请/专利号US19960719083

  • 发明设计人 JEFFREY C. KALB JR.;ROBERT W. DAYWITT;

    申请日1996-09-26

  • 分类号G01R31/26;

  • 国家 US

  • 入库时间 2022-08-22 02:08:46

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