A correcting method and a correcting apparatus which consider a proximity effect when drawing a pattern of a photomask by an energy beam such as an electron beam or a light proximity effect when performing exposure by using a photomask and obtaining a transfer pattern and can correct the pattern data so that the finally obtained transfer pattern becomes close to the designed pattern even if they occur. Where there is another pattern at the periphery of a pattern in a certain mesh at a center which is subjected to mesh registration, it is decided that a mutual proximity effect will occur at the time of drawing, only a part of the patterns in which it can be considered that the mutual proximity effect will occur are subdivided, and the dosage amount data at drawing are assigned to individual subdivided patterns. Where there is not another pattern at the periphery, it is decided that the self proximity effect will occur at the time of drawing, the peripheral portions of the pattern in which it can be considered that the self proximity effect will occur are subdivided, and the dosage amount data at drawing are assigned to individual subdivided patterns.
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