首页>
外国专利>
Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
展开▼
机译:可靠的低电阻带,用于使用选择性外延的沟槽存储DRAM单元
展开▼
页面导航
摘要
著录项
相似文献
摘要
Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.
展开▼