High melting point metal silicide canning null in order conservation multilayer polycide structure

摘要

PURPOSE: To improve the oxidation resistance of a silicide layer and to prevent the conductive property and chemical stability of the surface of a multilayered polycide structure from being deteriorated by coating the polycide structure with an oxidation-resistant film. CONSTITUTION: After a polycrystalline silicon layer 16 is formed on a semiconductor substrate, a first high-melting point metallic layer 18 and a high-melting point metal silicide composite layer 20 are successively formed on the layer 16. Then silicide is formed by causing a reaction between the metallic layers 18 and 20, and the underlying polycrystalline silicon 16 and the formed polycide structure is stipulated by the patterning and etching techniques. Therefore, the chemical stability and oxidation resistance at the polycide structure are remarkably improved.