Production method of TiNi shape memory alloy thin film by the substrate heating

摘要

PROBLEM TO BE SOLVED: To obtain an oriented crystal thin film having a large amt. of displacement and fitted for a microactuator, while keeping the temp. of the substrate of metal or alloy specified m.p. at specific temp, by forming Ti-Ni shape memory alloy thin film by sputtering. ;SOLUTION: As to a substrate of a metal or an alloy having a ≥1,000°C m.p. or a substrate film-formed with this metal or alloy, while the temp. is held in the range of 300 to 550°C, sputtering is executed to form a Ti-Ni shape memory alloy thin film. Moreover, the metal or alloy having a ≥1,000°C m.p. is a Pt or the alloy thereof or Cu or the alloy thereof, and the thickness of the thin film is controlled to 0.1 to 50 μm, preferably to 0.1 to 20 μm. Furthermore, the Ti-Ni alloy (intermetallic compd.) fundamentally has a componental compsn. in which the atomic ratio is respectively 50 atomic %, but, if required, it can be controlled to 40 to 60 atomic % Ti, and the balance Ni.;COPYRIGHT: (C)2000,JPO