Production manner of field emission die electron source and production manner of plane surface luminous device and production manner null of

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electron source capable of enhancing the pattern precision of an electron emission area at low cost. SOLUTION: A silicon oxide layer 4 is formed on a polysilicon layer 3 in a step (b), and the patterning of the silicon oxide layer 4 is carried out in a step (c). In a step (d), a porous polysilicon layer 5 is formed by performing positive electrode oxidation processing with a constant current while performing light irradiation on the exposed polysilicon layer 3 by using the silicon oxide layer 4 as a mask material layer, and by using an electrolytic solution that is prepared by mixing 55 wt.% of hydrogen fluoride aqueous solution and ethanol with a ratio of 1:1, and cooled at 0 deg.C. In a step (e), a thermally oxidized porous polysilicon layer 6 is formed by oxidizing the porous polysilicon layer 5 by a rapid thermal oxidation method. In a step (f), a metal thin film 7 that is a conductive thin film is formed on the front surface and the inside surface of the silicon oxide layer 4 and the front surface of the thermally oxidized porous polysilicon layer 6 by a deposition method through the use of a metal mask.