ELECTRICALLY CONDUCTIVE Ta FILM FORMING MATERIAL, FORMATION OF ELECTRICALLY CONDUCTIVE Ta FILM, FORMATION OF WIRING FILM AND ULSI

摘要

PROBLEM TO BE SOLVED: To obtain a material useful as a barrier film at the time of forming a Cu wiring film on a silicon substrate by preparing an electrically conductive Ta film forming material contg. a Ta-contg. compd. and a hydrocarbon based solvent. ;SOLUTION: At the time of forming a Cu wiring film on a silicon substrate, as a barrier film preventing the diffusion of Cu into the substrate, an electrically conductive Ta film forming material composed of a Ta-contg. compd. and a hydrocarbon based solvent is used. As the Ta-contg. compd., one or ≥ two kinds among TaCl5.S(C2H5)2, CH3TaCl4, (CH3)2TaCl3, (CH3)3TaCl2, CH3TaCl4.S (CH5)2, or the like, are used. As the hydrocarbon based solvent, the one having 5 to 40 carbon number is preferable, and one or ≥ two kinds among petane, hexane, heptane, octane, nonane, decane, or the like, are used. This electrically conductive Ta film forming material is applied on the substrate, and the substrate is heated, by which an electrically conductive Ta film as a barrier film can efficiently be formed.;COPYRIGHT: (C)2000,JPO