首页> 外国专利> DEBURRING METHOD OF SEMICONDUCTOR AND WIDE GUN FOR DEBURRING

DEBURRING METHOD OF SEMICONDUCTOR AND WIDE GUN FOR DEBURRING

机译:半导体及宽枪除火的除火方法

摘要

PROBLEM TO BE SOLVED: To deburr a semiconductor at good work efficiency without impairing a light-receiving part of the semiconductor using an installment having a low- cost and simple constitution. ;SOLUTION: A mask is disposed on surfaces of semiconductors 11-14, 21-24 and an abrasive is injected from a plurality of injection nozzles 1a, 1b of a wide gun 1 for deburring a surface having a plurality of injection nozzles 1a, 1b corresponding to their respective lead parts 3a, 3b. The surfaces of the semiconductors 11-14, 21-24 are deburred by moving the wide gun 1 for deburring a surface in parallel to the lead parts 3a, 3b while applying an abrasive locally and concurrently to the burr portion of a plurality of the semiconductors 11-4, 21-24. After the deburring work of a back surface of the semiconductor is carried out by a wide gun for deburring a back surface having a plurality of injection nozzles similarly corresponding to their respective lead parts 3a, 3b, the semiconductor is primarily washed by both surface shower and is secondarily washed by a washing wide gun.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:使用具有低成本和简单结构的装置在不损害半导体的光接收部分的情况下以良好的工作效率对半导体进行去毛刺。 ;解决方案:在半导体11-14、21-24的表面上设置一个掩模,并从宽枪1的多个喷嘴1a,1b注入磨料,以对具有多个喷嘴1a,1b的表面去毛刺对应于它们各自的引线部分3a,3b。通过移动宽枪1以平行于引线部分3a,3b对表面进行去毛刺的同时对半导体11-14、21-24的表面去毛刺,同时向多个半导体的毛刺部分局部并同时施加磨料。 11-4、21-24。在用宽枪对半导体背面进行去毛刺工作之后,用宽枪对具有与它们各自的引线部分3a,3b相似的多个喷嘴的背面进行去毛刺,首先用表面喷淋和然后用宽口径洗枪进行第二次冲洗。;版权:(C)2000,JPO

著录项

  • 公开/公告号JP2000202775A

    专利类型

  • 公开/公告日2000-07-25

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19990007147

  • 发明设计人 YAMAGATA OSAMU;

    申请日1999-01-14

  • 分类号B24C1/00;B24C5/04;B24C11/00;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:58

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