SILICA-BASED COVERING FILM FORMING SOLUTION, ITS PRODUCTION, AND SILICA-BASED COVERING FILM AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To obtain the subject solution capable of eliminating the need for a catalyst addition or heat-treating process and capable of forming a silica coated film having excellent film formability and a large thickness even at a room temperature and useful for an insulating film, or the like, in a semiconductor element, or the like, by including an organic solvent and a siloxane compound having an activation group. ;SOLUTION: This solution contains (A) preferably an organic solvent e.g. a hydrocarbon-based organic solvent such as dimethylsilicone and (B) preferably a siloxane compound preferably containing a compound of the formula [R1-R4 are each a halogen, or the like; R5 and R6 are each H, or the like; (m)≥1] and having an activation group. The solution is obtained by mixing in a dry atmosphere a mixed solution in which preferably a silane compound having an activation group (preferably, tetrachlorosilane, or the like) is dissolved in the component A in a dry atmosphere with a mixed solution in which an oligomerizing agent oligomerizing the silane compound (preferably water) is mixed with the component A.;COPYRIGHT: (C)2000,JPO