首页> 外国专利> EXPOSURE MASK FOR NEAR-FIELD LIGHT, ITS PRODUCTION, EXPOSURE DEVICE FOR NEAR-FIELD LIGHT AND EXPOSING METHOD USING NEAR-FIELD LIGHT

EXPOSURE MASK FOR NEAR-FIELD LIGHT, ITS PRODUCTION, EXPOSURE DEVICE FOR NEAR-FIELD LIGHT AND EXPOSING METHOD USING NEAR-FIELD LIGHT

机译:近场灯的曝光罩,其生产,近场灯的曝光装置及使用近场灯的曝光方法

摘要

PROBLEM TO BE SOLVED: To provide an exposure mask for near-field light which is used to avoid the influences of diffraction of light on the pattern transfer process using light and to localize the near-field light as much as possible to transfer a finer pattern, and to provide its producing method.;SOLUTION: This mask has an integrated laminate structure consisting of a mask substrate 2 such as glass, polarizing layer 4 made of a conductor such as metal and having 100 nm grid line width, bonding layer 6 made, for example, of which has good light-transmitting property and prevents reflection of light, and mask 8 having a metal opening pattern with the min. dimension smaller than the wavelength of light. The thickness of the mask 8 is controlled to twice or smaller than the metal opening width. It is preferable that the mask thickness is made as small as possible.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种用于近场光的曝光掩模,该掩模可避免光的衍射对使用光的图案转印过程的影响,并尽可能地定位近场光以转印更精细的图案解决方案:该掩模具有集成的层压结构,该结构由玻璃等掩模基板2,由栅线宽度为100 nm的金属等导体制成的偏光层4,由粘合层6制成。例如,具有最小的金属开口图案的掩模8例如具有良好的透光性并且防止光的反射。尺寸小于光的波长。掩模8的厚度被控制为金属开口宽度的两倍或更小。最好使掩模的厚度尽可能小。版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000112116A

    专利类型

  • 公开/公告日2000-04-21

    原文格式PDF

  • 申请/专利权人 ESASHI MASAKI;ONO TAKAHITO;

    申请/专利号JP19980282601

  • 发明设计人 ESASHI MASAKI;ONO TAKAHITO;

    申请日1998-10-05

  • 分类号G03F1/14;G03F1/08;G03F7/20;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:19

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号